| PART |
Description |
Maker |
| 2SK2973 SK2973 |
From old datasheet system
RF POWER MOS FET(VHF/UHF power amplifiers)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC1968A SC1968A 2SC1968 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on UHF band Mobile radio applications)
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
SILICON POWER MOS FET
|
California Eastern Labs
|
| 2N5486G 2N605206 2N6071A06 2N6059 2N6052 2N6058 |
JFET VHF/UHF Amplifiers N?Channel - Depletion
Darlington Complementary Silicon Power Transistors
Sensitive Gate Triacs Silicon Bidirectional Thyristors
|
ONSEMI[ON Semiconductor]
|
| J310 J309 J308 |
JFET VHF/UHF Amplifiers
|
ONSEMI[ON Semiconductor]
|
| AN548A |
MICROSTRIP DESIGN TECHNIQUES FOR UHF AMPLIFIERS
|
Motorola, Inc
|
| 2N5486 2N5486-D 2N5486RLRP |
JFET VHF/UHF Amplifiers N-Channel - Depletion
|
ONSEMI[ON Semiconductor]
|
| BF245A BF245C BF244A BF244B BF245 BF245B BF245A-D |
JFET VHF/UHF Amplifiers N-Channel - Depletion
|
ONSEMI[ON Semiconductor]
|
| 2SC1324 TEST12 |
NPN EPITAXIAL PLANAR TYPE(Broadband amplifiers from VHF to UHF band)
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MAX9755ETI MAX9755EUI |
2.6W Stereo Audio Power Amplifiers and DirectDrive Headphone Amplifiers
|
MAXIM - Dallas Semiconductor
|
| 2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
From old datasheet system
RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
